Prod uct Bul le tin OP770A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Features
? Supresses high frequency noise
? Variety of sensitivity ranges
? Wide receiving angle
? Side looking package for space limited
applications
Description
The OP770 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a clear epoxy package. The
internal collector-emitter capacitor allows
the device to be used in applications
where external high frequency emissions
could compromise signal integrity.
Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100 ° C
Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 ° C (1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW (2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/ ° C above 25 ° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lense surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in μ A, use the formula I CED = 10 (0.040T A-3.4) when
T A is ambient temperature in ° C.
Typi cal Per form ance Curves
The device’s wide receiving angle
provides relatively even reception over a
Typical Spectral Response
Schematic
large area.
The OP770 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
Side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Wavelength - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396
相关PDF资料
OP775C PHOTOTRNS NPN W/CAP SIDE LOOK
OP798D PHOTOTRANS NPN W/RESISTOR TO-18
OP800D PHOTOTRANS SILICON NPN HERM TO18
OP800WSL PHOTOTRANS SILICON NPN HERM TO18
OP803SL PHOTOTRANS SILICON NPN HERM TO18
OP805TXV PHOTOTRANSISTR SILICON NPN TO-18
OP830SL PHOTODARLINGTON SILICON NPN TO18
OP830WSL PHOTODARLINGTON NPN 890NM TO-18
相关代理商/技术参数
OP770D 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP775A 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP775B 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP775C 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP775D 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP777 制造商:AD 制造商全称:Analog Devices 功能描述:Precision Micropower Single Supply Operational Amplifier
OP777AR 制造商:Analog Devices 功能描述:OP AMP PRECISION SMD SOIC8 777
OP777ARM 制造商:AD 制造商全称:Analog Devices 功能描述:Precision Micropower Single-Supply Operational Amplifiers